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Datasheet File OCR Text: |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A92 TRANSISTORPNP (c) TO 92 FEATURES Power dissipation PCM : 0.625W Tamb=25ae(c) Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -300V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae unless Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(c) 1 DC current gain hFE(c) 2 hFE(c) 3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) Test 1.EMITTER 2.BASE 3.COLLECTOR 123 otherwise MIN specified(c) TYP MAX UNIT V V V -0.25 -0.1 |I A |I A conditions Ic= -100|I IE=0 A Ic= -1 mAIB=0 IE= -100|I AIC=0 VCB= -200 V IE=0 -300 -300 -5 VEB= -5 VIC=0 VCE= -10 V, IC=- 1 mA VCE= -10V, IC = -10 mA VCE= -10 V, IC= -80 mA IC= -20 mA, IB= -2 mA IC= -20 mA, IB= -2 mA VCE= -20 V, IC= -10 mA f = 30MHz 50 60 80 60 250 -0.2 -0.9 V V MHz fT CLASSIFICATION OF h FE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
Price & Availability of A92-TO-92 |
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